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july 2003 the following document specifies spansion memory products that are now offered by both advanced micro devices and fujitsu. although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to customers of both amd and fujitsu. continuity of specifications there is no change to this datasheet as a result of offering the device as a spansion product. any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. future routine revisions will occur when appropriate, and changes will be noted in a revision summary. continuity of ordering part numbers amd and fujitsu continue to support existing part numbers beginning with ?am? and ?mbm?. to order these products, please use only the ordering part numbers listed in this document. for more information please contact your local amd or fujitsu sales office for additional information about spansion memory solutions. am29lv800d data sheet publication number am29lv800d_00 revision a amendment 4 issue date january 21, 2005 for new designs, s29al008d supersedes am29lv800d and is the factory-recommended migration path. please refer to the s29al008d data sheet for specifications and ordering information.
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preliminary this document contains information on a product under development at fasl llc. the information is intended to help you evaluate this product. fasl llc reserves the right to change or discontinue work on this proposed product without notice. publication am29lv800d_00 rev. a amend. 4 issue date: january 21, 2005 am29lv800d 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 3.0 volt-only boot sector flash memory distinctive characteristics single power supply operation ? 2.7 to 3.6 volt read and write operations for battery-powered applications manufactured on 0.23 m process technology ? compatible with 0.32 m am29lv800 device high performance ? access times as fast as 70 ns ultra low power consumption (typical values at 5 mhz) ? 200 na automatic sleep mode current ? 200 na standby mode current ? 7 ma read current ? 15 ma program/erase current flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and fifteen 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and fifteen 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences top or bottom boot block configurations available embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses minimum 1 million write cycle guarantee per sector 20-year data retention at 125 c ? reliable operation for the life of the system package option ? 48-ball fbga ? 48-pin tsop ?44-pin so compatibility with jedec standards ? pinout and software compatible with single- power supply flash ? superior inadvertent write protection data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation hardware reset pin (reset#) ? hardware method to reset the device to reading array data for new designs, s29al008d supersedes am29lv800d and is the factory-recommended migration path. please refer to the s29al008d data sheet for specifications and ordering information.
2am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary general description the am29lv800d is an 8 mbit, 3.0 volt-only flash memory organized as 1,048,576 bytes or 524,288 words. the device is offered in 48-ball fbga, 44-pin so, and 48-pin tsop packages. for more information, refer to publication number 21536. the word-wide data (x16) appears on dq15?dq0; the byte-wide (x8) data appears on dq7?dq0. this device requires only a single, 3.0 volt v cc supply to perform read, program, and erase operations. a standard eprom programmer can also be used to program and erase the device. this device is manufactured using amd?s 0.23 m process technology, and offers all the fea - tures and benefits of the am29lv800b, which was manufactured using 0.32 m process tech - nology. the standard device offers access times of 70, 90, and 120 ns, allowing high speed micropro - cessors to operate without wait states. to elim - inate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 3.0 volt power supply for both read and write func - tions. internally generated and regulated volt - ages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . commands are written to the command register using standard micropro - cessor write timings. register contents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase opera - tions. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facilitates faster pro - gramming times by requiring only two write cycles to program data instead of four. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithm?an internal algo - rithm that automatically preprograms the array (if it is not already programmed) before exe - cuting the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write operations during power transitions. the hardware sector protection feature disables both program and erase operations in any com - bination of the sectors of memory. this can be achieved in-system or via programming equip - ment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset cir - cuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresses have been stable for a specified amount of time, the device enters the auto - matic sleep mode . the system can also place the device into the standby mode . power con - sumption is greatly reduced in both these modes. amd?s flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is pro - grammed using hot electron injection.
january 21, 2005 am29lv800d_00_a4_e am29lv800d 3 preliminary table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 connection diagrams . . . . . . . . . . . . . . . . . . . . . . 5 special handling instructions for fbga package .............. 7 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ordering information . . . . . . . . . . . . . . . . . . . . . . . 8 standard products ......................................................................8 valid combinations . . . . . . . . . . . . . . . . . . . . . . . . . 9 device bus operations . . . . . . . . . . . . . . . . . . . . . . 10 table 1. am29lv800d device bus operations .10 word/byte configuration ...................................................... 10 requirements for reading array data ............................... 10 writing commands/command sequences .........................11 program and erase operation status ...................................11 standby mode ..............................................................................11 automatic sleep mode ..............................................................11 reset#: hardware reset pin .................................................11 output disable mode ...............................................................12 table 2. am29lv800dt top boot block sector addresses ........................................12 table 3. am29lv800db bottom boot block sector addresses ........................................13 autoselect mode ........................................................................13 table 4. am29lv800d autoselect codes (high voltage method) ................................14 sector protection/unprotection .......................................... 14 temporary sector unprotect ............................................... 14 figure 1. temporary sector unprotect operation .................................................. 15 figure 2. in-system sector protect/ sector unprotect algorithms ........................ 16 hardware data protection .....................................................17 command definitions . . . . . . . . . . . . . . . . . . . . . . 17 reading array data ...................................................................17 reset command .........................................................................17 autoselect command sequence .......................................... 18 word/byte program command sequence ....................... 18 figure 1. program operation ........................ 19 chip erase command sequence .......................................... 19 sector erase command sequence ...................................... 19 erase suspend/erase resume commands ....................... 20 figure 1. erase operation ............................ 21 table 5. am29lv800d command definitions ..21 write operation status . . . . . . . . . . . . . . . . . . . . 22 dq7: data# polling ..................................................................22 figure 1. data# polling algorithm ................. 23 ry/by#: ready/busy# .............................................................23 dq6: toggle bit i ......................................................................24 dq2: toggle bit ii .....................................................................24 reading toggle bits dq6/dq2 ............................................24 dq5: exceeded timing limits ..............................................25 dq3: sector erase timer .......................................................25 figure 1. toggle bit algorithm ...................... 25 table 6. write operation status ....................26 absolute maximum ratings . . . . . . . . . . . . . . . . 27 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . 27 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . .28 cmos compatible .................................................................. 28 figure 1. i cc1 current vs. time (showing active and automatic sleep currents) .................... 29 figure 1. typical i cc1 vs. frequency ............. 29 test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . .30 figure 1. test setup................................... 30 table 7. test specifications ........................................30 key to switching waveforms. . . . . . . . . . . . . . . . 30 figure 1. input waveforms and measurement levels................................... 30 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 31 read operations ........................................................................31 figure 1. read operations timings ............... 31 hardware reset (reset#) ....................................................32 figure 1. reset# timings........................... 32 word/byte configuration (byte#) ..................................33 figure 1. byte# timings for read operations ................................................ 34 figure 1. byte# timings for write operations ................................................ 34 erase/program operations ....................................................35 figure 1. program operation timings............ 36 figure 1. chip/sector erase operation timings .................................................... 37 figure 1. data# polling timings (during embedded algorithms) ............................... 38 figure 1. toggle bit timings (during embedded algorithms) ............................... 38 figure 1. dq2 vs. dq6 ............................... 39 temporary sector unprotect ...............................................39 figure 1. temporary sector unprotect timing diagram ......................................... 39 figure 1. sector protect/unprotect timing diagram ......................................... 40 alternate ce# controlled erase/program operations .................................................... 41 figure 1. alternate ce# controlled write operation timings...................................... 42 erase and programming performance . . . . . . . . . 43 latchup characteristics . . . . . . . . . . . . . . . . . . . . 43 tsop and so pin capacitance . . . . . . . . . . . . . . 43 data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 physical dimensions* . . . . . . . . . . . . . . . . . . . . . . .44 ts 048?48-pin standard tsop ........................................ 44 tsr048?48-pin reverse tsop .........................................45 fbb 048?48-ball fine-pitch ball grid array (fbga) 6 x 9 mm ................................................................... 46 physical dimensions . . . . . . . . . . . . . . . . . . . . . . . 47 vbk 048 - 48 ball fine-pitch ball grid array (fbga) 6.15 x 8.15 mm .............................................................47 so 044?44-pin small outline package .......................... 48 revision summary . . . . . . . . . . . . . . . . . . . . . . . . .49
4am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary product selector guide note: see ?ac characteristics? for full specifications. block diagram family part number am29lv800d speed options full voltage range: v cc = 2.7?3.6 v -70 -90 -120 max access time, ns (t acc ) 70 90 120 max ce# access time, ns (t ce ) 70 90 120 max oe# access time, ns (t oe ) 30 35 50 input/output buffers x-decoder y-decoder chip enable output enable erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# byte# ce# oe# stb stb dq0 ? dq15 (a-1) sector switches ry/by# reset# data y-gating cell matrix address latch a0?
january 21, 2005 am29lv800d_00_a4_e am29lv800d 5 preliminary connection diagrams a1 a15 a18 a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a17 a7 a6 a5 a4 a3 a2 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 a1 a15 a18 a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a17 a7 a6 a5 a4 a3 a2 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 am29lv800d_ reverse tsop standard tsop
6am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary connection diagrams a1 b1 c1 d1 e1 f1 g1 h1 a2 b2 c2 d2 e2 f2 g2 h2 a3 b3 c3 d3 e3 f3 g3 h3 a4 b4 c4 d4 e4 f4 g4 h4 a5 b5 c5 d5 e5 f5 g5 h5 a6 b6 c6 d6 e6 f6 g6 h6 dq15/a-1 v ss byte# a16 a15 a14 a12 a13 dq13 dq6 dq14 dq7 a11 a10 a8 a9 v cc dq4 dq12 dq5 nc nc reset# we# dq11 dq3 dq10 dq2 nc a18 nc ry/by# dq9 dq1 dq8 dq0 a5 a6 a17 a7 oe# v ss ce# a0 a1 a2 a4 a3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ry/by# a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce# v ss oe# dq0 dq8 dq1 dq9 dq2 dq10 dq3 dq11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 reset# we# a8 a9 a10 a11 a12 a13 a14 a15 a16 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v cc so fbga top view, balls facing down
january 21, 2005 am29lv800d_00_a4_e am29lv800d 7 preliminary special handling instructions for fbga package special handling is required for flash memory products in fbga packages. flash memory devices in fbga packages may be damaged if exposed to ultrasonic cleaning methods. the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150 c for pro - longed periods of time. pin configuration a0?a18 = 19 addresses dq0?dq14= 15 data inputs/outputs dq15/a-1 = dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) byte# = selects 8-bit or 16-bit mode ce# = chip enable oe# = output enable we# = write enable reset# = hardware reset pin, active low ry/by# = ready/busy# output v cc = 3.0 volt-only single power supply (see product selector guide for speed options and voltage supply tolerances) v ss = device ground nc = pin not connected internally logic symbol 19 16 or 8 dq0?dq15 (a-1) a0?a18 ce# oe# we# reset byte# ry/by#
8am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the elements below. am29lv800d t -70 e c temperature range c = commercial (0c to +70c) d = commercial (0 c to +70 c) with pb-free package i = industrial (?40 c to +85 c) f = industrial (?40 c to +85 c) with pb-free package package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) f = 48-pin thin small outline package (tsop) reverse pinout (tsr048) s = 44-pin small outline package (so 044) wb = 48-ball fine pitch ball grid array (fbga) 0.80 mm pitch, 6 x 9 mm package (fbb048) wc = 48-ball fine pitch ball grid array (fbga) = 0.80 mm pitch, 6.15 x 8.15 mm package (vbk 048) speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29lv800d 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos flash memory 3.0 volt-only read, program, and erase valid combinations for tsop and so packages am29lv800dt-70, am29lv800db-70 am29lv800dt-90, am29lv800db-90 am29lv800dt-120, am29lv800db-120 ec, ei, ed, ef, fc, fd, ff, fi, sc, sd, sf, si ec, ei, ed,ef,fd, ff,fc, fi,sd, sfsc, si
january 21, 2005 am29lv800d_00_a4_e am29lv800d 9 preliminary valid combinations valid combinations list configurations planned to be suppo rted in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. valid combinations for fbga packages order number package marking am29lv800dt-70, am29lv800db-70 wbc wbi wbd wbf wcc wci wcd wcf l800dt70v, l800db70v c, i, d,f am29lv800dt-90, am29lv800db-90 wcc wci wcd wcf wbc wbi wbd wbf l800dt90v, l800db90v am29lv800dt-120, am29lv800db-120 wbc wbi wbd wbf l800dt12v, l800db12v
10 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory location. the register is composed of latches that store the commands, along with the address and data information needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the function of the device. ta b l e 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. the following subsections describe each of these operations in further detail. table 1. am29lv800d device bus operations legend: l = logic low = v il , h = logic high = v ih , v id = 12.0 0.5 v, x = don?t care, a in = address in, d in = data in, d out = data out notes: 1. addresses are a18:a0 in word mode (byte# = v ih ), a18:a-1 in byte mode (byte# = v il ). 2. the sector protect and sector unprotect functions ma y also be implemented via programming equipment. see the ?sector protection/unprotection? section. word/byte configuration the byte# pin controls whether the device data i/o pins dq15?dq0 operate in the byte or word configuration. if the byte# pin is set at logic ?1?, the device is in word configuration, dq15?dq0 are active and controlled by ce# and oe#. if the byte# pin is set at logic ?0?, the device is in byte configuration, and only data i/o pins dq0?dq7 are active and controlled by ce# and oe#. the data i/o pins dq8?dq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at v ih . the byte# pin determines whether the device outputs array data in words or bytes. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see ?reading array data? for more information. refer to the ac read operations table for timing specifications and to figure 1 for the timing dia - gram. i cc1 in the dc characteristics table repre - sents the active current specification for reading array data. operation ce# oe # we # reset # addresses (note 1) dq0? dq7 dq8?dq15 byte # = v ih byte# = v il read l l h h a in d out d out dq8?dq14 = high- z, dq15 = a-1 write l h l h a in d in d in standby v cc 0.3 v x x v cc 0.3 v x high-z high-z high-z output disable l h h h x high-z high-z high-z reset x x x l x high-z high-z high-z sector protect (note 2) l h l v id sector address, a6 = l, a1 = h, a0 = l d in x x sector unprotect (note 2) l h l v id sector address, a6 = h, a1 = h, a0 = l d in x x temporary sector unprotect x x x v id a in d in d in high-z
january 21, 2005 am29lv800d_00_a4_e am29lv800d 11 preliminary writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . for program operations, the byte# pin deter - mines whether the device accepts program data in bytes or words. refer to ?word/byte configu - ration? for more information. the device features an unlock bypass mode to facilitate faster programming. once the device enters the unlock bypass mode, only two write cycles are required to program a word or byte, instead of four. the ?word/byte program command sequence? section has details on pro - gramming data to the device using both stan - dard and unlock bypass command sequences. an erase operation can erase one sector, mul - tiple sectors, or the entire device. tables 2 and 3 indicate the address space that each sector occupies. a ?sector address? consists of the address bits required to uniquely select a sector. the ?command definitions? section has details on erasing a sector or the entire chip, or sus - pending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is sepa - rate from the memory array) on dq7?dq0. standard read cycle timings apply in this mode. refer to the ?autoselect mode? and ?autoselect command sequence? sections for more infor - mation. i cc2 in the dc characteristics table represents the active current specification for the write mode. the ?ac characteristics? section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on dq7?dq0. standard read cycle timings and i cc read specifications apply. refer to ?write operation status? for more information, and to ?ac characteristics? for timing diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the oe# input. the device enters the cmos standby mode when the ce# and reset# pins are both held at v cc 0.3 v. (note that this is a more restricted voltage range than v ih .) if ce# and reset# are held at v ih , but not within v cc 0.3 v, the device will be in the standby mode, but the standby current will be greater. the device requires stan - dard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. if the device is deselected during erasure or pro - gramming, the device draws active current until the operation is completed. in the dc characteristics table, i cc3 and i cc4 represents the standby current specification. automatic sleep mode the automatic sleep mode minimizes flash device energy consumption. the device auto - matically enables this mode when addresses remain stable for t acc + 30 ns. the automatic sleep mode is independent of the ce#, we#, and oe# control signals. standard address access timings provide new data when addresses are changed. while in sleep mode, output data is latched and always available to the system. i cc4 in the dc characteristics table represents the automatic sleep mode current specification. reset#: hardware reset pin the reset# pin provides a hardware method of resetting the device to reading array data. when the reset# pin is driven low for at least a period of t rp , the device immediately termi - nates any operation in progress, tristates all output pins, and ignores all read/write com - mands for the duration of the reset# pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v ss 0.3 v, the device draws cmos standby current (i cc4 ). if reset# is held at v il but not within v ss 0.3 v, the standby current will be greater. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firmware from the flash memory.
12 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary if reset# is asserted during a program or erase operation, the ry/by# pin remains a ?0? (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the system can thus monitor ry/by# to determine whether the reset operation is complete. if reset# is asserted when a program or erase operation is not exe - cuting (ry/by# pin is ?1?), the reset operation is completed within a time of t ready (not during embedded algorithms). the system can read data t rh after the reset# pin returns to v ih . refer to the ac characteristics tables for reset# parameters and to figure 1 for the timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high impedance state. table 2. am29lv800dt top boot block sector addresses sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 0 0 x x x 64/32 00000h?0ffffh 00000h?07fffh sa1 0 0 0 1 x x x 64/32 10000h?1ffffh 08000h?0ffffh sa2 0 0 1 0 x x x 64/32 20000h?2ffffh 10000h?17fffh sa3 0 0 1 1 x x x 64/32 30000h?3ffffh 18000h?1ffffh sa4 0 1 0 0 x x x 64/32 40000h?4ffffh 20000h?27fffh sa5 0 1 0 1 x x x 64/32 50000h?5ffffh 28000h?2ffffh sa6 0 1 1 0 x x x 64/32 60000h?6ffffh 30000h?37fffh sa7 0 1 1 1 x x x 64/32 70000h?7ffffh 38000h?3ffffh sa8 1 0 0 0 x x x 64/32 80000h?8ffffh 40000h?47fffh sa9 1 0 0 1 x x x 64/32 90000h?9ffffh 48000h?4ffffh sa10 1 0 1 0 x x x 64/32 a0000h?affffh 50000h?57fffh sa11 1 0 1 1 x x x 64/32 b0000h?bffffh 58000h?5ffffh sa12 1 1 0 0 x x x 64/32 c0000h?cffffh 60000h?67fffh sa13 1 1 0 1 x x x 64/32 d0000h?dffffh 68000h?6ffffh sa14 1 1 1 0 x x x 64/32 e0000h?effffh 70000h?77fffh sa15 1 1 1 1 0 x x 32/16 f0000h?f7fffh 78000h?7bfffh sa16 1 1 1 1 1 0 0 8/4 f8000h?f9fffh 7c000h?7cfffh sa17 1 1 1 1 1 0 1 8/4 fa000h?fbfffh 7d000h?7dfffh sa18 1 1 1 1 1 1 x 16/8 fc000h?fffffh 7e000h?7ffffh
january 21, 2005 am29lv800d_00_a4_e am29lv800d 13 preliminary table 3. am29lv800db bottom boot block sector addresses note for tables 2 and 3 : address range is a18:a-1 in byte mode and a18:a0 in word mode. see ?word/byte configuration? section. autoselect mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq7?dq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its cor - responding programming algorithm. however, the autoselect codes can also be accessed in- system through the command register. when using programming equipment, the autoselect mode requires v id (11.5 v to 12.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in ta b l e 4 . in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see tables 2 and 3 ). ta b l e 4 shows the remaining address bits that are don?t care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on dq7?dq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in ta b l e 5 . this method does not require v id . see ?com - mand definitions? for details on using the autoselect mode. sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 0 0 0 0 x 16/8 00000h?03fffh 00000h?01fffh sa1 0 0 0 0 0 1 0 8/4 04000h?05fffh 02000h?02fffh sa2 0 0 0 0 0 1 1 8/4 06000h?07fffh 03000h?03fffh sa3 0 0 0 0 1 x x 32/16 08000h?0ffffh 04000h?07fffh sa4 0 0 0 1 x x x 64/32 10000h?1ffffh 08000h?0ffffh sa5 0 0 1 0 x x x 64/32 20000h?2ffffh 10000h?17fffh sa6 0 0 1 1 x x x 64/32 30000h?3ffffh 18000h?1ffffh sa7 0 1 0 0 x x x 64/32 40000h?4ffffh 20000h?27fffh sa8 0 1 0 1 x x x 64/32 50000h?5ffffh 28000h?2ffffh sa9 0 1 1 0 x x x 64/32 60000h?6ffffh 30000h?37fffh sa10 0 1 1 1 x x x 64/32 70000h?7ffffh 38000h?3ffffh sa11 1 0 0 0 x x x 64/32 80000h?8ffffh 40000h?47fffh sa12 1 0 0 1 x x x 64/32 90000h?9ffffh 48000h?4ffffh sa13 1 0 1 0 x x x 64/32 a0000h?affffh 50000h?57fffh sa14 1 0 1 1 x x x 64/32 b0000h?bffffh 58000h?5ffffh sa15 1 1 0 0 x x x 64/32 c0000h?cffffh 60000h?67fffh sa16 1 1 0 1 x x x 64/32 d0000h?dffffh 68000h?6ffffh sa17 1 1 1 0 x x x 64/32 e0000h?effffh 70000h?77fffh sa18 1 1 1 1 x x x 64/32 f0000h?fffffh 78000h?7ffffh
14 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary table 4. am29lv800d autoselect codes (high voltage method) l = logic low = v il , h = logic high = v ih , sa = sector address, x = don?t care. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. the device is shipped with all sectors unpro - tected. amd offers the option of programming and protecting sectors at its factory prior to shipping the device through amd?s express - flash? service. contact an amd representative for details. it is possible to determine whether a sector is protected or unprotected. see ?autoselect mode? for details. sector protection/unprotection can be imple - mented via two methods. the primary method requires v id on the reset# pin only, and can be implemented either in-system or via programming equip - ment. figure 2 shows the algorithms and figure 1 shows the timing diagram. this method uses standard microprocessor bus cycle timing. for sector unprotect, all unprotected sectors must first be protected prior to the first sector unpro - tect write cycle. the alternate method intended only for pro - gramming equipment requires v id on address pin a9 and oe#. this method is compatible with programmer routines written for earlier 3.0 volt- only amd flash devices. publication number 20536 contains further details; contact an amd representative to request a copy. temporary sector unprotect this feature allows temporary unprotection of previously protected sectors to change data in-system. the sector unprotect mode is acti - vated by setting the reset# pin to v id . during this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset# pin, all the previously protected sectors are protected again. figure 1 shows the algo - description mode ce# oe# we # a1 8 to a1 2 a1 1 to a1 0 a9 a8 to a7 a6 a5 to a2 a1 a0 dq8 to dq15 dq7 to dq0 manufacturer id : amd l l h x x v id x l x l l x 01h device id: am29lv800b (top boot block) word l l h x x v id x l x l h 22h dah byte l l h x dah device id: am29lv800b (bottom boot block) word l l h x x v id x l x l h 22h 5bh byte l l h x 5bh sector protection verification l l h sa x v id x l x h l x 01h (protected) x 00h (unprotecte d)
january 21, 2005 am29lv800d_00_a4_e am29lv800d 15 preliminary rithm, and figure 1 shows the timing diagrams, for this feature. figure 1. temporary sector unprotect operation start perform erase or program operations reset# = v ih temporary sector unprotect completed (note 2) reset# = v id (note 1) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again.
16 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary figure 2. in-system sector protect/ sector unprotect algorithms sector protect: write 60h to sector address with a6 = 0, a1 = 1, a0 = 0 set up sector address wait 150 s verify sector protect: write 40h to sector address with a6 = 0, a1 = 1, a0 = 0 read from sector address with a6 = 0, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 ms first write cycle = 60h? data = 01h? remove v id from reset# write reset command sector protect complete yes yes no plscnt = 25? yes device failed increment plscnt temporary sector unprotect mode no sector unprotect: write 60h to sector address with a6 = 1, a1 = 1, a0 = 0 set up first sector address wait 15 ms verify sector unprotect: write 40h to sector address with a6 = 1, a1 = 1, a0 = 0 read from sector address with a6 = 1, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 ms data = 00h? last sector verified? remove v id from reset# write reset command sector unprotect complete yes no plscnt = 1000? yes device failed increment plscnt temporary sector unprotect mode no all sectors protected? yes protect all sectors: the indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address set up next sector address no yes no yes no no yes no sector protect algorithm sector unprotect algorithm first write cycle = 60h? protect another sector? reset plscnt = 1
january 21, 2005 am29lv800d_00_a4_e am29lv800d 17 preliminary hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to ta b l e 5 for command definitions). in addition, the following hardware data protection mea - sures prevent accidental erasure or program - ming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal pro - gram/erase circuits are disabled, and the device resets. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent unintentional writes when v cc is greater than v lko . write pulse ?glitch? protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept com - mands on the rising edge of we#. the internal state machine is automatically reset to reading array data on power-up. command definitions writing specific address and data commands or sequences into the command register initiates device operations. ta b l e 5 defines the valid reg - ister command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the appro - priate timing diagrams in the ?ac characteris - tics? section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algo - rithm. after the device accepts an erase suspend com - mand, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see ?erase sus - pend/erase resume commands? for more infor - mation on this mode. the system must issue the reset command to re-enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see the ?reset command? section, next. see also ?requirements for reading array data? in the ?device bus operations? section for more information. the read operations table provides the read parameters, and figure 1 shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are don?t care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, how - ever, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the opera - tion is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend).
18 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary if dq5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. ta b l e 5 shows the address and data requirements. this method is an alter - native to that shown in ta b l e 4 , which is intended for prom programmers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufacturer code. a read cycle at address xx01h in word mode (or 02h in byte mode) returns the device code. a read cycle containing a sector address (sa) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unpro - tected. refer to tables 2 and 3 for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. word/byte program command sequence the system may program the device by word or byte, depending on the state of the byte# pin. programming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further con - trols or timings. the device automatically pro - vides internally generated program pulses and verifies the programmed cell margin. ta b l e 5 shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is com - plete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using dq7, dq6, or ry/by#. see ?write operation status? for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the programming operation. the program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be pro - grammed from a ?0? back to a ?1?. attempting to do so may halt the operation and set dq5 to ?1?, or cause the data# polling algo - rithm to indicate the operation was successful. however, a succeeding read will show that the data is still ?0?. only erase operations can convert a ?0? to a ?1?. unlock bypass command sequence the unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program command sequence. the unlock bypass command sequence is initiated by first writing two unlock cycles. this is followed by a third write cycle containing the unlock bypass command, 20h. the device then enters the unlock bypass mode. a two-cycle unlock bypass program command sequence is all that is required to program in this mode. the first cycle in this sequence con - tains the unlock bypass program command, a0h; the second cycle contains the program address and data. additional data is pro - grammed in the same manner. this mode dis - penses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. ta b l e 5 shows the requirements for the command sequence. during the unlock bypass mode, only the unlock bypass program and unlock bypass reset com - mands are valid. to exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. the first cycle must contain the data 90h; the second cycle the data 00h. addresses are don?t care for both cycles. the device then returns to reading array data. figure 1 illustrates the algorithm for the program operation. see the erase/program operations table in ?ac characteristics? for parameters, and to figure 1 for timing dia - grams.
january 21, 2005 am29lv800d_00_a4_e am29lv800d 19 preliminary note: see table 5 for program command sequence. figure 1. program operation chip erase command sequence chip erase is a six bus cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up com - mand. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algo - rithm. the device does not require the system to preprogram prior to erase. the embedded erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. ta b l e 5 shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. note that a hardware reset during the chip erase operation immediately terminates the opera - tion. the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. see ?write operation status? for infor - mation on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 1 illustrates the algorithm for the erase operation. see the erase/program operations tables in ?ac characteristics? for parameters, and to figure 1 for timing diagrams. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. ta b l e 5 shows the address and data requirements for the sector erase command sequence. the device does not require the system to pre - program the memory prior to erase. the embedded erase algorithm automatically pro - grams and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time- out period, additional sector addresses and sector erase commands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. it is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. if the time between addi - tional sector erase commands can be assumed to be less than 50 s, the system need not monitor dq3. any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress
20 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary the system can monitor dq3 to determine if the sector erase timer has timed out. (see the ?dq3: sector erase timer? section.) the time- out begins from the rising edge of the final we# pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. note that a hardware reset during the sector erase operation imme - diately terminates the operation. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. when the embedded erase algorithm is com - plete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. refer to ?write operation status? for informa - tion on these status bits. figure 1 illustrates the algorithm for the erase operation. refer to the erase/program opera - tions tables in the ?ac characteristics? section for parameters, and to figure 1 for timing dia - grams. erase suspend/erase resume commands the erase suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algo - rithm. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. addresses are ?don?t-cares? when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately termi - nates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device ?erase suspends? all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors pro - duces status data on dq7?dq0. the system can use dq7, or dq6 and dq2 together, to deter - mine if a sector is actively erasing or is erase- suspended. see ?write operation status? for information on these status bits. after an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program opera - tion using the dq7 or dq6 status bits, just as in the standard program operation. see ?write operation status? for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is re ady for another valid operation. see ?autoselect command sequence? for more information. the system must write the erase resume command (address bits are ?don?t care?) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing.
january 21, 2005 am29lv800d_00_a4_e am29lv800d 21 preliminary notes: 1. see table 5 for erase command sequence. 2. see ?dq3: sector erase timer? for more information. figure 1. erase operation table 5. am29lv800d command definitions start write erase command sequence data poll from system data = ffh? no yes erasure completed embedded erase algorithm in progress command sequence (note 1) bus cycles (notes 2 - 5 ) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 manufacturer id word 4 555 aa 2aa 55 555 90 x00 01 byte aaa 555 aaa device id, top boot block word 4 555 aa 2aa 55 555 90 x01 22da byte aaa 555 aaa x02 da device id, bottom boot block word 4 555 aa 2aa 55 555 90 x01 225b byte aaa 555 aaa x02 5b sector protect verify (note 9) word 4 555 aa 2aa 55 555 90 (sa) x02 xx00 xx01 byte aaa 555 aaa (sa) x04 00 01 program word 4 555 aa 2aa 55 555 a0 pa pd byte aaa 555 aaa unlock bypass word 3 555 aa 2aa 55 555 20 byte aaa 555 aaa unlock bypass program (note 10) 2 xxx a0 pa pd unlock bypass reset (note 11) 2 xxx 90 xxx 00 cycles autoselect (note
22 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary legend: x = don?t care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a18?a12 uniquely select any sector. notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operations. 4. data bits dq15?dq8 are don?t cares for unlock and command cycles. 5. address bits a18?a11 are don?t cares for unlock and command cycles, unless pa or sa required. 6. no unlock or command cycles required when reading array data. 7. the reset command is required to return to reading array data when device is in the autoselect mode, or if dq5 goes high (while the device is providing status data). 8. the fourth cycle of the autoselect command sequence is a read cycle. 9. the data is 00h for an unprotected sector and 01h for a protected sector. see ?autoselect command sequence? for more information. 10.the unlock bypass command is required prior to the unlock bypass program command. 11.the unlock bypass reset command is required to return to reading array data when the device is in the unlock bypass mode. 12.the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 13.the erase resume command is valid only during the erase suspend mode. write operation status the device provides several bits to determine the status of a write operation: dq2, dq3, dq5, dq6, dq7, and ry/by#. ta b l e 6 and the fol - lowing subsections describe the functions of these bits. dq7, ry/by#, and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase suspend. data# polling is valid after the rising edge of the final we# pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on dq7 the complement of the datum programmed to dq7. this dq7 status also applies to programming during erase sus - pend. when the embedded program algorithm is complete, the device outputs the datum pro - grammed to dq7. the system must provide the program address to read valid status informa - tion on dq7. if a program address falls within a protected sector, data# polling on dq7 is active for approximately 1 s, then the device returns to reading array data. during the embedded erase algorithm, data# polling produces a ?0? on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a ?1? on dq7. this is analogous to the complement/true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to ?1?; chip erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 byte aaa 555 aaa aaa 555 aaa sector erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 byte aaa 555 aaa aaa 555 erase suspend (note 12) 1 xxx b0 erase resume (note 13) 1 xxx 30
january 21, 2005 am29lv800d_00_a4_e am29lv800d 23 preliminary prior to this, the device outputs the ?comple - ment,? or ?0.? the system must provide an address within any of the sectors selected for erasure to read valid status information on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# polling on dq7 is active for approxi - mately 100 s, then the device returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects dq7 has changed from the complement to true data, it can read valid data at dq7?dq0 on the following read cycles. this is because dq7 may change asyn - chronously with dq0?dq6 while output enable (oe#) is asserted low. figure 1 , data# polling timings (during embedded algorithms) , in the ?ac characteristics? section illustrates this. ta b l e 6 shows the outputs for data# polling on dq7. figure 1 shows the data# polling algo - rithm. ry /b y #: r e ad y/b u sy # the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algo - rithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7?dq0 addr = va read dq7?dq0 addr = va dq7 = data? start notes: 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = ?1? be - cause dq7 may change simultaneously with dq5. figure 1. data# polling algorithm
24 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively erasing or programming. (this includes pro - gramming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. ta b l e 6 shows the outputs for ry/by#. figures 1 , 1 , 1 and 1 shows ry/by# for read, reset, pro - gram, and erase operations, respectively. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algo - rithm operation, successive read cycles to any address cause dq6 to toggle. (the system may use either oe# or ce# to control the read cycles.) when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approximately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 together to determine whether a sector is actively erasing or is erase-suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use dq7 (see the subsection on ?dq7: data# polling? ). if a program address fa lls within a protected sector, dq6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend- program mode, and stops toggling once the embedded program algorithm is complete. ta b l e 6 shows the outputs for toggle bit i on dq6. figure 1 shows the toggle bit algorithm. figure 1 in the ?ac characteristics? section shows the toggle bit timing diagrams. figure 1 shows the differences between dq2 and dq6 in graphical form. see also the subsection on ?dq2: toggle bit ii? . dq2: toggle bit ii the ?toggle bit ii? on dq2, when used with dq6, indicates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe# or ce# to control the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-suspended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sector and mode information. refer to ta b l e 6 to compare outputs for dq2 and dq6. figure 1 shows the toggle bit algorithm in flow - chart form, and the section ?dq2: toggle bit ii? explains the algorithm. see also the ?dq6: tog gle bi t i? subsection. figure 1 shows the toggle bit timing diagram. figure 1 shows the differences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 1 for the following discussion. whenever the system initially begins reading toggle bit status, it must read dq7?dq0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on dq7?dq0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as
january 21, 2005 am29lv800d_00_a4_e am29lv800d 25 preliminary dq5 went high. if the toggle bit is no longer tog - gling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not completed the operation suc - cessfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system ini - tially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 1 ). dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 pro - duces a ?1.? this is a failure condition that indi - cates the program or erase cycle was not successfully completed. the dq5 failure condition may appear if the system tries to program a ?1? to a location that is previously programmed to ?0.? only an erase operation can change a ?0? back to a ?1.? under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a ?1.? under both these conditions, the system must issue the reset command to return the device to reading array data. dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) if additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase com - mand. when the time-out is complete, dq3 switches from ?0? to ?1.? the system may ignore dq3 if the system can guarantee that the time between additional sector erase com - mands will always be less than 50 s. see also the ?sector erase command sequence? section. after the sector erase command sequence is written, the system should read the status on dq7 (data# polling) or dq6 (toggle bit i) to ensure the device has accepted the command sequence, and then read dq3. if dq3 is ?1?, the internally controlled erase cycle has begun; all further commands (other than erase suspend) are ignored until the erase operation is com - plete. if dq3 is ?0?, the device will accept addi - tional sector erase commands. to ensure the command has been accepted, the system soft - ware should check the status of dq3 prior to and following each subsequent sector erase command. if dq3 is high on the second status check, the last command might not have been accepted. ta b l e 6 shows the outputs for dq3. start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7?dq0 toggle bit = toggle? read dq7?dq0 twice read dq7?dq0 notes: 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as dq5 changes to ?1?. see text. figure 1. toggle bit algorithm (notes 1, 2) (note 1)
26 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary table 6. write operation status notes: 1. dq5 switches to ?1? when an embedded program or embedded erase operation has exceeded the maximum timing limits. see ?dq5: exceeded timing limits? for more information. 2. dq7 and dq2 require a valid address when reading status information. refer to the appropriate subsection for further details. operation dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) ry/by # standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0
january 21, 2005 am29lv800d_00_a4_e am29lv800d 27 preliminary absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . ?65 c to +150 c ambient temperature with power applied . . . . . . . . . . . . . . ?65 c to +85 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . ?0.5 v to +4.0 v a9 , oe# , and reset# (note 2) . . . . . . . . . . . ?0.5 v to +12.5 v all other pins (note 1). . . . . . ?0.5 v to v cc +0.5 v output short circuit current (note 3) . . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input or i/o pins may undershoot v ss to ?2.0 v for periods of up to 20 ns. see figure 2 . maximum dc voltage on input or i/o pins is v cc +0.5 v. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 3 . 2. minimum dc input voltage on pins a9, oe#, and reset# is ?0.5 v. during voltage transitions, a9, oe#, and reset# may undershoot v ss to ?2.0 v for periods of up to 20 ns. see figure 2 . maximum dc input voltage on pin a9 is +12.5 v which may overshoot to 14.0 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges commercial (c) devices ambient temperature (t a ) . . . . . . . . . . .0c to +70c industrial (i) devices ambient temperature (t a ) . . . . . . . . .?40c to +85c v cc supply voltages v cc for regulated voltage range . . . . +3.0 v to +3.6 v v cc for full voltage range . . . . . . . . . +2.7 v to +3.6 v operating ranges define those limits between which the functionality of the device is guaranteed figure 2. maximum negative overshoot waveform figure 3. maximum positive overshoot waveform 20 ns 20 ns +0.8 v ?0.5 v 20 ns ?2.0 v 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v
28 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary dc characteristics cmos compatible notes: 1. the i cc current listed is typically less than 2 ma/mhz, with oe# at v ih . typical v cc is 3.0 v. 2. maximum i cc specifications are tested with v cc = v ccmax . 3. i cc active while embedded erase or embedded program is in progress. 4. automatic sleep mode enables the low power mode when addresses remain stable for t acc + 30 ns. 5. not 100% tested. paramete r description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9 input load current v cc = v cc max ; a9 = 12.5 v 35 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1 , 2 ) ce# = v il, oe# = v ih, byte mode 5 mhz 7 15 ma 1 mhz 2 4 ce# = v il, oe# = v ih, word mode 5 mhz 7 15 1 mhz 2 4 i cc2 v cc active write current (notes 2 , 3 , 5 ) ce# = v il, oe# = v ih 15 30 ma i cc3 v cc standby current (note 2) ce#, reset# = v cc 0.3 v 0.2 5 a i cc4 v cc reset current (note 2) reset# = v ss 0.3 v 0.2 5 a i cc5 automatic sleep mode (notes 2 , 4 ) v ih = v cc 0.3 v; v il = v ss 0.3 v 0.2 5 a v il input low voltage ?0.5 0.8 v v ih input high voltage 0.7 x v cc v cc + 0.3 v v id voltage for autoselect and temporary sector unprotect v cc = 3.3 v 11.5 12.5 v v ol output low voltage i ol = 4.0 ma, v cc = v cc min 0.45 v v oh1 output high voltage i oh = ?2.0 ma, v cc = v cc min 0.85 v cc v v oh2 i oh = ?100 a, v cc = v cc min v cc ?0.4 v lko low v cc lock-out voltage (note 4) 2.3 2.5 v
january 21, 2005 am29lv800d_00_a4_e am29lv800d 29 preliminary dc characteristics (continued) zero power flash 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 supply current in ma time in ns note: addresses are switching at 1 mhz figure 1. i cc1 current vs. time (showing active and automatic sleep currents) 10 8 2 0 12345 frequency in mhz supply current in ma note: t = 25 c figure 1. typical i cc1 vs. frequency 2.7 v 3.6 v 4 6
30 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary te s t c o n d i t i o n s table 7. test specifications key to switching waveforms 2.7 k ? c l 6.2 k ? 3.3 device under test figure 1. test setup note: diodes are in3064 or test condition -70 -90, -120 unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 ns input pulse levels 0.0?3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high z) 3.0 v 0.0 v 1.5 v 1.5 v output measurement level input figure 1. input waveforms and measurement levels
january 21, 2005 am29lv800d_00_a4_e am29lv800d 31 preliminary ac characteristics read operations notes: 1. not 100% tested. 2. see figure 1 and table 7 for test specifications. parameter description speed options jedec std test setup -70 -90 -120 unit t avav t rc read cycle time (note 1) min 70 90 120 ns t avqv t acc address to output delay ce# = v il oe# = v il max 70 90 120 ns t elqv t ce chip enable to output delay oe# = v il max 70 90 120 ns t glqv t oe output enable to output delay max 30 35 50 ns t ehqz t df chip enable to output high z (note 1) max 25 30 30 ns t ghqz t df output enable to output high z (note 1) max 25 30 30 ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first (note 1) min 0 ns t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t oe 0 v ry/by# reset# t df t oh figure 1. read operations timings
32 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ac characteristics hardware reset (reset#) note: not 100% tested. parameter description all speed options jedec std test setup unit t ready reset# pin low (during embedded algorithms) to read or write (see note) max 20 s t ready reset# pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset# high time before read (see note) min 50 ns t rpd reset# low to standby mode min 20 s t rb ry/by# recovery time min 0 ns reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb figure 1. reset# timings
january 21, 2005 am29lv800d_00_a4_e am29lv800d 33 preliminary ac characteristics word/byte configuration (byte#) parameter speed options jedec std description -70 -90 -120 unit t elfl/ t elfh ce# to byte# switching low or high max 5 ns t flqz byte# switching low to output high z max 25 30 30 ns t fhqv byte# switching high to output active min 70 90 120 ns
34 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary dq15 output data output ce# oe# byte# t elfl dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t flq byte# switching from word to byte mode dq15 output data output byte# t elfh dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t fhq byte# switching from byte to word mode figure 1. byte# timings for read operations note: refer to the erase/program operations table for t as and t ah specifications. figure 1. byte# timings for write operations ce# we# byte# the falling edge of the last we# t hold t set (t as )
january 21, 2005 am29lv800d_00_a4_e am29lv800d 35 preliminary ac characteristics erase/program operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. parameter speed options jedec std description -70 -90 -120 unit t avav t wc write cycle time (note 1) min 70 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 50 ns t dvwh t ds data setup time min 35 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 programming operation (note 2) byte ty p 8 s word ty p 16 t whwh2 t whwh2 sector erase operation (note 2) ty p 1 sec t vcs v cc setup time (note 1) min 50 s t rb recovery time from ry/by# min 0 ns t busy program/erase valid to ry/by# delay min 90 ns
36 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ac characteristics oe# we# ce# v cc data a ddresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa notes: 1. pa = program address, pd = program data, d out is the true data at the program address. 2. illustration shows device in word mode. figure 1. program operation timings
january 21, 2005 am29lv800d_00_a4_e am29lv800d 37 preliminary ac characteristics oe# ce# addresses v cc we# data 2aah sa t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for sector erase), va = valid address for reading status data (see ?write operation status?). 2. illustration shows device in word mode. figure 1. chip/sector erase operation timings
38 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ac characteristics we# ce# oe# high z t oe high z dq7 dq0?dq6 ry/by# t busy complement true a ddresses va t oeh t ce t ch t oh t df va va status data complement status data true valid data valid data t acc t rc note: va = valid address. illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. figure 1. data# polling timings (during embedded algorithms) we# ce# oe# high z t oe dq6/dq2 ry/by# t busy addresses va t oeh t ce t ch t oh t df va va t acc t rc valid data valid status valid status (first read) (second read) (stops toggling) valid status va note: va = valid address; not required for dq6. illustration shows first two status cycle after command sequence, last status rea d cycle, and array data read cycle. figure 1. toggle bit timings (during embedded algorithms)
january 21, 2005 am29lv800d_00_a4_e am29lv800d 39 preliminary ac characteristics temporary sector unprotect note: not 100% tested. parameter all speed options jedec std description unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s note: the system may use ce# or oe# to toggle dq2 and dq6. dq2 toggles only when read at an address within a n erase-suspended sector. figure 1. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing reset# t vidr 12 v 0 or 3 v ce# we# ry/by# t vidr t rsp program or erase command sequence 0 or 3 v figure 1. temporary sector unprotect timing diagram
40 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ac characteristics sector protect: 150 s sector unprot ect: 15 ms 1 s r eset# sa, a6, a1, a0 data ce# we# oe# 60h 60h 40h valid* valid* valid* status sector protect/unprotect verify v id v ih * for sector protect, a6 = 0, a1 = 1, a0 = 0. for sector unprotect, a6 = 1, a1 = 1, a0 = 0. figure 1. sector protect/unprotect timing diagram
january 21, 2005 am29lv800d_00_a4_e am29lv800d 41 preliminary ac characteristics alternate ce# controlled erase/program operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. parameter speed options jedec std description -70 -90 -120 unit t avav t wc write cycle time (note 1) min 70 90 120 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 45 50 ns t dveh t ds data setup time min 35 45 50 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 35 35 50 ns t ehel t cph ce# pulse width high min 30 ns t whwh1 t whwh1 programming operation (note 2) byte typ 8 s word typ 16 t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec
42 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t busy notes: 1. pa = program address, pd = program data, dq7# = complement of the data written to the device, d out = data written to the device. 2. figure indicates the last two bus cycles of command sequence. 3. word mode address used as an example. figure 1. alternate ce# controlled write operation timings
43 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 3.0 v v cc , 1,000,000 cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90c, v cc = 2.7 v, 1,000,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. in the pre-programming step of the embedded erase algo rithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. see table 5 for further information on command definitions. 6. the device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. latchup characteristics includes all pins except v cc . test conditions: v cc = 3.0 v, one pin at a time. tsop and so pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. data retention parameter typ (note 1) max (note 2) unit comments sector erase time 1 10 s excludes 00h programming prior to erasure chip erase time 14 s byte programming time 8 300 s excludes system level overhead (note 5) word programming time 16 360 s chip programming time (note 3) byte mode 8.4 25 s word mode 5.8 17 s description min max input voltage with respect to v ss on all pins except i/o pins (including a9, oe#, and reset#) ?1.0 v 12.5 v input voltage with respect to v ss on all i/o pins ?1.0 v v cc + 1.0 v v cc current ?100 ma +100 ma parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf parameter test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years
january 21, 2005 am29lv800d_00_a4_e am29lv800d 44 preliminary physical dimensions* ts 048?48-pin standard tsop * for reference only. bsc is an ansi standard for basic space centering. dwg rev aa; 10/99
45 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary physical dimensions tsr048?48-pin reverse tsop * for reference only. bsc is an ansi standard for basic space centering. dwg rev aa; 10/99
january 21, 2005 am29lv800d_00_a4_e am29lv800d 46 preliminary physical dimensions fbb 048?48-ball fine-pitch ball grid array (fbga) 6 x 9 mm dwg rev af; 10/99
47 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary physical dimensions vbk 048 - 48 ball fine-pitch ball grid array (fbga) 6.15 x 8.15 mm 3338 \ 16-038.25b notes: 1. dimensioning and tolerancing per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jesd 95-1, spp-010 (except as noted). 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball row matrix size in the "d" direction. symbol "me" is the ball column matrix size in the "e" direction. n is the total number of solder balls. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row parallel to the d or e dimension, respectively, sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/2 8. not used. 9. "+" indicates the theoretical center of depopulated balls. 10 a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. package vbk 048 jedec n/a 6.15 mm x 8.15 mm nom package symbol min nom max note a --- --- 1.00 overall thickness a1 0.18 --- --- ball height a2 0.62 --- 0.76 body thickness d 8.15 bsc. body size e 6.15 bsc. body size d1 5.60 bsc. ball footprint e1 4.00 bsc. ball footprint md 8 row matrix size d direction me 6 row matrix size e direction n 48 total ball count fb 0.33 --- 0.43 ball diameter e 0.80 bsc. ball pitch sd / se 0.40 bsc. solder ball placement --- depopulated solder balls side view top view seating plane a2 a (4x) 0.10 10 d e c 0.10 a1 c b a c 0.08 bottom view a1 corner b a m f 0.15 c m 7 7 6 e se sd 6 5 4 3 2 a b c d e f g 1 h fb e1 d1 c f 0.08 pin a1 corner index mark
january 21, 2005 am29lv800d_00_a4_e am29lv800d 48 preliminary physical dimensions so 044?44-pin small outline package dwg rev ac; 10/99
49 am29lv800d am29lv800d_00_a4_e january 21, 2005 preliminary revision summary revision a (january 19, 2004) changed data sheet status to advance informa - tion to indicate new 0.23 m process tech - nology. the base device part number has changed from am29lv800b to am29lv800d. specifications for i cc1 , t whwh1 , t whwh2 have changed. extended temperature is no longer available. all other specifications in the data sheet remain unchanged. deleted references to kgd option in connection diagrams section. (this document was formerly released as publi - cation 21490, revision h.) revision a+1 (february 3, 2004) distinctive characteristics, general description, ordering information deleted references to kgd option. (this docu - ment was formerly released as publication 21490, revision h1.) revision a+2 (april 2, 2004) general description removed unlock bypass section. global converted datasheet to preliminary. ordering information added pb-free packages and updated valid combinations tables to include changes. absolute maximum rating changed ambient with power applied from 125 c to 85 c. revision a+3 (june 23, 2004) global change changed all helvetica/times roman fonts to gill sans for amd or verdana. ?physical dimensions? on page 47 added vbk048 package drawing. ?ordering information? on page 8 added ?wc =...? to standard products table. added ?wcc, wci, wcd, wcf? to valid combi - nations table. added colophon. revision a+4 (january 21, 2005) added migration statement. colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limita - tion, ordinary industrial use, general offi ce use, personal use, and household use, but are not designed, developed and manufac tured as con - templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a seri ous effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intolerable (i.e., submersibl e repeater and artificial satellite). please note that fasl wil l not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. any semicondu ctor devices have an inherent chance of failure. you must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating condi - tions. if any products described in this document represent goods or technologies subject to certain restrictions on export und er the foreign ex - change and foreign trade law of japan, the us export administration regulations or the applicable laws of any other country, th e prior authorization by the respective government entity will be required for export of those products. trademarks copyright ? 2000?2005 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are regist ered trademarks of advanced micro devices, inc. expressflash is a trademark of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .

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